 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDS8672S N-Channel PowerTrench(R) SyncFETTM December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8m Features Max rDS(on) = 4.8m at VGS = 10V, ID = 18A Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A Includes SyncFET Schottky body diode High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability 100% Rg (Gate Resistance) tested Termination is Lead-free and RoHS Compliant (R) TM General Description tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology. Application Synchronous Rectifier for DC/DC Converters Notebook Vcore low side switch Point of load low side switch D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25C TA = 25C (Note 3) (Note 1a) (Note 1b) Ratings 30 20 18 80 216 2.5 1.0 -55 to +150 Units V V A mJ W C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 C/W Package Marking and Ordering Information Device Marking FDS8672S Device FDS8672S Package SO8 Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 1 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 33 500 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25C VGS = 10V, ID = 18A VGS = 4.5V, ID = 15A VGS = 10V, ID = 18A, TJ = 125C VDS = 5V, ID = 18A 1.0 2.1 -5 3.8 5.3 5.3 78 4.8 7.0 7.8 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2005 985 135 0.6 2670 1310 205 2.0 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V, ID = 18A VDD = 15V, ID = 18A, VGS = 10V, RGEN = 6 12 4 26 3 29 15 5.5 3.7 22 10 42 10 41 21 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 18A VGS = 0V, IS = 1.8A IF = 18A, di/dt = 300A/s 0.8 0.4 27 31 1.2 0.7 43 50 V ns nC NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V. (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 2 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 80 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.5V ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 VGS = 3.5V VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 60 VGS = 10V VGS = 4.5V 40 VGS = 4V VGS = 3V 2.0 1.5 1.0 0.5 0 20 40 ID, DRAIN CURRENT(A) VGS = 4.5V VGS = 4V 20 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V 0 0 1 2 3 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 15 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 18A VGS = 10V ID = 18A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 0.8 0.6 -75 rDS(on), DRAIN TO 12 9 TJ = 125oC 6 TJ = 25oC 3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 80 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V ID, DRAIN CURRENT (A) 60 VDD = 5V 10 1 0.1 0.01 TJ = 125oC 40 TJ = 125oC TJ = 25oC 20 TJ = 25oC TJ = -55oC TJ = -55oC 0 0 1 2 3 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 3 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 18A 5000 Ciss VDD = 10V 8 6 VDD = 20V VDD = 15V CAPACITANCE (pF) 1000 Coss 4 2 Crss f = 1MHz VGS = 0V 100 0 0 5 10 15 20 25 30 Qg, GATE CHARGE(nC) 60 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 ID, DRAIN CURRENT (A) 30 IAS, AVALANCHE CURRENT(A) 15 VGS = 10V 10 TJ = 25oC 10 VGS = 4.5V TJ = 125oC 5 RJA = 50 C/W o 1 0.01 0.1 1 10 100 500 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 1ms 1000 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 10 THIS AREA IS LIMITED BY rDS(on) 10ms 100 1 100ms 1s 10s DC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 10 0.01 0.01 0.1 1 10 100 1 0.5 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 4 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 SINGLE PULSE RJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.0001 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 5 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDS8672S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 10 -2 TJ = 125oC CURRENT: 0.8A/Div 10 -3 TJ = 100oC 10 -4 10 -5 TJ = 25oC 10 -6 TIME: 12.5nS/Div 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDS8672S SyncFET Body Diode Reverse Recovery Characteristics Figure 15. SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 6 www.fairchildsemi.com FDS8672S N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDS8672S Rev.D2 7 www.fairchildsemi.com |
Price & Availability of FDS8672S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |